Graphene Electronics and Photonics
Tony Low, Ph.D.
Graphene possess unique properties for electronic and photonic applications, such as gate tunability, high carrier mobility, wide-band optical absorption extending into terahertz regime and compatibility with silicon processing technologies. Drawing upon theoretical and modeling studies of in-house experiments, I will discuss several key issues related to the performances of graphene electronic and photonic devices. First, the internal and substrate polar optical phonons provide main energy dissipation pathway for optically excited carriers, and suppressing these energy loss channels would allow for efficient graphene photodetectors and bolometers driven by hot electrons and phonons. Second, coupling of collective electronic excitations with these phonons lead to modified plasmon dispersions and losses, where long-lived hybrid plasmon-phonon coupled mode can be utilized in the terahertz to infrared spectrum for tunable plasmonic devices. Lastly, I will discuss how deformation and morphological structures found in large scale growth graphene can serve as dominant electronic scattering centers, compromising performance in high-speed electronic devices and the possibility of strain engineering for exploratory novel graphene electronics.
Biography: Tony Low obtained his Ph.D. in Electrical Engineering in 2008 from the National University of Singapore. He was a visiting scientist at the Network for Computational Nanotechnology at Purdue University in 2007, before becoming a postdoctoral associate in 2008. He is currently a research scientist based at the IBM TJ Watson Research Center in New York. His main research interest lies in the theory, simulation and exploration of novel nanoelectronics and optoelectronics devices. He has authored or co-authored more than 30 peer-reviewed publications and has given invited talks and tutorials at related conferences and universities. He is also serving as an IBM assignee to the Institute for Nanoelectronics Discovery and Exploration (INDEX) and an industry-university liaison to several research programs funded by NSF and the Nanoelectronics Research Initiative (NRI).
Tuesday February 19, 2013
12:00 pm - 1:00 pm
Marcus Nanotechnology Building | 345 Ferst Street | Atlanta, Georgia 30332-0269
Naeemi, Azad J
DEPARTMENT: Electrical & Computer Engr